HMC7950 Description
The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.0 dB of noise figure, 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain pression, requiring 64 mA from a 5 V supply.
HMC7950 Key Features
- Output power for 1 dB pression (P1dB): 16 dBm typical
- Saturated output power (PSAT): 19.5 dBm typical
- Gain: 15 dB typical
- Noise figure: 2.0 dB typical
- Output third-order intercept (IP3): 26 dBm typical
- Supply voltage: 5 V at 64 mA
- 50 Ω matched input/output