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HMC7950 - GaAs pHEMT MMIC Low Noise Amplifier

Description

The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC).

The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz.

Features

  • Output power for 1 dB compression (P1dB): 16 dBm typical.
  • Saturated output power (PSAT): 19.5 dBm typical.
  • Gain: 15 dB typical.
  • Noise figure: 2.0 dB typical.
  • Output third-order intercept (IP3): 26 dBm typical.
  • Supply voltage: 5 V at 64 mA.
  • 50 Ω matched input/output.

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Datasheet Details

Part number HMC7950
Manufacturer Analog Devices
File Size 1.10 MB
Description GaAs pHEMT MMIC Low Noise Amplifier
Datasheet download datasheet HMC7950 Datasheet
Additional preview pages of the HMC7950 datasheet.

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Data Sheet HMC7950 2 GHz to 28 GHz, GaAs pHEMT MMIC Low Noise Amplifier FEATURES ► Output power for 1 dB compression (P1dB): 16 dBm typical ► Saturated output power (PSAT): 19.5 dBm typical ► Gain: 15 dB typical ► Noise figure: 2.0 dB typical ► Output third-order intercept (IP3): 26 dBm typical ► Supply voltage: 5 V at 64 mA ► 50 Ω matched input/output APPLICATIONS ► Test instrumentation ► Military and space FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.
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