FEATURES
Low VOS (VBE match): 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS
Weigh scales Low noise, op amp, front end Current mirror and current sink/source Low noise instrumentation amplifiers Voltage controlled attenuators Log amplifiers GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. Matched Monolithic Dual Transistor MAT01 PIN CONNECTION DIAGRAM MAT01 TOP VIEW (Not to Scale) C1 1 6 C2 B1 2 5 B2 E1 3 4 E2 NOTES 1. SUBSTRATE IS CONNECTED TO CASE. Figure 1. 00282-001 High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA.
Analog Devices
