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MAT01 - Matched Monolithic Dual Transistor

General Description

The MAT01 is a monolithic dual NPN transistor.

An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time.

Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.

Key Features

  • Low VOS (VBE match): 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet FEATURES Low VOS (VBE match): 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V min APPLICATIONS Weigh scales Low noise, op amp, front end Current mirror and current sink/source Low noise instrumentation amplifiers Voltage controlled attenuators Log amplifiers GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%.