Analog Devices MAT03
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Each transistor is individually tested to data sheet specifications. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications.| Part No. | MAT03 |
|---|---|
| Datasheet | MAT03 Download |
| Manufacturer |  Analog Devices |
| Description | Dual PNP Transistor |
| Buy | Stock & Price |
FEATURES
Dual Matched PNP Transistor Low Offset Voltage: 100●V Max Low Noise: 1 nV/√Hz @ 1 kHz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Low Noise, Matched Dual PNP Transistor MAT03 PIN CONNECTION TO-78 (H Suffix)
GENERAL DESCRIPTION
Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ω) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To ensure the longterm stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse baseemitter junction potential. This prevents a base-emitter breakdown condition that can result in degradation of gain and matching performance due to excessive breakdown current.
