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AM2370N - N-Channel MOSFET

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet Details

Part number AM2370N
Manufacturer Analog Power
File Size 292.20 KB
Description N-Channel MOSFET
Datasheet download datasheet AM2370N Datasheet
Additional preview pages of the AM2370N datasheet.

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Full PDF Text Transcription

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Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters AM2370N VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 1.5 1.3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 1.5 1.2 10 1.6 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.
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