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Analog Power
AM30N10-70D
N-Channel 100-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters
PRODUCT SUMMARY rDS(on) (mΩ) 78 @ VGS = 10V 92 @ VGS = 4.5V
VDS (V) 100
ID(A) 21 19
ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 21 IDM Pulsed Drain Current b 100 IS Continuous Source Current (Diode Conduction) 30 T =25°C P 50 Power Dissipation C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range
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AM30N10-70D Datasheet
