Analog Power AM3810N
MOSFET
| Part No. | AM3810N |
|---|---|
| Datasheet | AM3810N Download |
| Manufacturer |  Analog Power |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● Battery Powered Instruments
● Portable Computing
● Mobile Phones
● GPS Units and Media Players PRODUCT SUMMARY rDS(on) (mΩ) 24.5 @ VGS = 4.5V 38 @ VGS = 2.5V VDS (V) 20 ID(A) 6 5 TSOP6
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±10 TA=25°C 6 ID Continuous Drain Current a TA=100°C 3.6 IDM Pulsed Drain Current b 20 a I 1 Continuous Source Current (Diode Conduction) S T =25°C 0.83 A PD Power Dissipation a TA=100°C 0.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 110 RθJA 150 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM3810N-2010...
