AM3949P Datasheet | Analog Power

Analog Power P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - Low r DS(on) provides higher efficiency and extends battery life G1 - Low thermal impedance copper leadframe TSOP-6 saves board space S2 G2 - Fast switching speed - High performance trench technology PRODUCTSUMMARY VDS (V) r DS(on) (Ω) -40 0.185 @VGS= -10V 0.240 @VGS= -4.5V ID (A) -2.5 -1.9 TSOP-6 Top View 16 25 34 D1 S1 D2 S1 G1 S2 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb TA=25o C TA=70o C -40 ±20 -2.5 -1.9 A -10 Continuous Source Current (Diode Conduction)a IS ±1.6 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25o C TA=70o...