AM4960N Datasheet | Analog Power

Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - Low r DS(on) provides higher efficiency and G1 extends battery life S1 - Low thermal impedance copper leadframe SOIC-8 saves board space S2 - Fast switching speed G2 - High performance trench technology PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) 89 @ VGS = 10V 104 @ VGS = 4.5V ID (A) ±4.0 ±3.7 SOIC-8 Top View D1 D2 D1 G1 G2 7 D1 6 D2 S1 S2 D2 N-Channel N-Channel MOSFET MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain...