Analog Power AM4960N
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM 60 V ±20 ±4.0 ±3.3 A ±25 Continuous Source Current (Diode Conduction)a IS 2 A Power Dissipationa Operating Junction and Storage Temperature Range TA=25oC TA=70oC PD 2.1 W 1.3 TJ, Tstg -55 to 150 oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec t <= 5 sec Symbol RθJA Maximum 62.5 110 Units oC/W oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM4960_A Analog Power AM4960N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Pulsed Source Current...