Analog Power AM5430N
MOSFET
| Part No. | AM5430N |
|---|---|
| Datasheet | AM5430N Download |
| Manufacturer |  Analog Power |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed
● Small Footprint DFN3x2-8L package Typical
APPLICATIONS
:● Portable Computing Power Conversion
● Portable Entertainment and GPS Power Conversion PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS = 10V 30 @ VGS = 4.5V VDS (V) 30 ID(A) 10 8.5 DFN3x2-8L EP D D D D G S S S
ABSOLUTE MAXIMUM RATINGS
(T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 TA=25°C 10 ID Continuous Drain Current a TA=70°C 7.5 IDM Pulsed Drain Current b 30 a I 4.4 Continuous Source Current (Diode Conduction) S T =25°C 3.5 A PD Power Dissipation a TA=70°C 2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 35 RθJA 81 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Prelimin...
