Datasheet4U Logo Datasheet4U.com

AM5430N - MOSFET

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed.
  • Small Footprint DFN3x2-8L package Typical.

📥 Download Datasheet

Datasheet preview – AM5430N

Datasheet Details

Part number AM5430N
Manufacturer Analog Power
File Size 296.70 KB
Description MOSFET
Datasheet download datasheet AM5430N Datasheet
Additional preview pages of the AM5430N datasheet.

📁 Similar Datasheet

  • AM54LS192 - Decimal & Hexadecimal Up/Down Counter (AMD)
  • AM54LS193 - Decimal & Hexadecimal Up/Down Counter (AMD)
  • AM54LS299 - 8-Bit Universal Shift/Storage Register (AMD)
  • AM54S160 - (AM54S160 - AM54S163) BCD Decade 4-Bit Binary Counters (AMD)
  • AM54S161 - (AM54S160 - AM54S163) BCD Decade 4-Bit Binary Counters (AMD)
  • AM54S163 - (AM54S160 - AM54S163) BCD Decade 4-Bit Binary Counters (AMD)
  • AM54S350 - Four-Bit Shifter (AMD)
  • AM50-0002 - Low Noise Amplifier 1.575 GHz (Tyco Electronics)
  • AM50-0002 - Low Noise Amplifier (MA-COM)
  • AM50-0003 - High Dynamic Range Low Noise Amplifier 800-1000 MHz (Tyco Electronics)
Other Datasheets by Analog Power

Full PDF Text Transcription

Click to expand full text
Analog Power AM5430N N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package Typical Applications: • Portable Computing Power Conversion • Portable Entertainment and GPS Power Conversion PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS = 10V 30 @ VGS = 4.5V VDS (V) 30 ID(A) 10 8.5 DFN3x2-8L EP D D D D G S S S ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 TA=25°C 10 ID Continuous Drain Current a TA=70°C 7.5 IDM Pulsed Drain Current b 30 a I 4.4 Continuous Source Current (Diode Conduction) S T =25°C 3.
Published: |