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AM5460N - MOSFET

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed.
  • Small Footprint DFN3x2-8L package DFN3x2-8L EP.

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Datasheet preview – AM5460N

Datasheet Details

Part number AM5460N
Manufacturer Analog Power
File Size 281.25 KB
Description MOSFET
Datasheet download datasheet AM5460N Datasheet
Additional preview pages of the AM5460N datasheet.

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Full PDF Text Transcription

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Analog Power AM5460N N-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package DFN3x2-8L EP PRODUCT SUMMARY rDS(on) (mΩ) 82 @ VGS = 10V 115 @ VGS = 4.5V VDS (V) 60 ID(A) 5 4.1 Typical Applications: • Telecom DC/DC converters • White LED boost converters • Industrial DC/DC conversion • Automotive Entertainment and GPS DC/DC conversion D D D D G S S S ABSOLUTE MAXIMUM RATINGS (T A = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 TA=25°C 5 ID Continuous Drain Current a TA=70°C 3.7 IDM Pulsed Drain Current b 30 a I 4.3 Continuous Source Current (Diode Conduction) S T =25°C 3.
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