Analog Power AM5922N
MOSFET
| Part No. | AM5922N |
|---|---|
| Datasheet | AM5922N Download |
| Manufacturer |  Analog Power |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● White LED boost converters
● Automotive Systems
● Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 23 @ VGS = 4.5V 33 @ VGS = 2.5V VDS (V) 20 ID(A) 7.9 6.6 DFN3x2-8L S1 G1 S2 G2 D1 D1 D2 D2
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 7.9 ID Continuous Drain Current a TA=70°C 6.4 b IDM Pulsed Drain Current 30 a I 2.8 Continuous Source Current (Diode Conduction) S T =25°C 2.1 A PD Power Dissipation a TA=70°C 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 60 RθJA 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Nu...
