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Analog Power
AM5922N
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY rDS(on) (mΩ) 23 @ VGS = 4.5V 33 @ VGS = 2.5V
VDS (V) 20
ID(A) 7.9 6.6
DFN3x2-8L S1 G1 S2 G2 D1 D1 D2 D2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 7.9 ID Continuous Drain Current a TA=70°C 6.4 b IDM Pulsed Drain Current 30 a I 2.8 Continuous Source Current (Diode Conduction) S T =25°C 2.1 A PD Power Dissipation a TA=70°C 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
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AM5922N Datasheet
