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Analog Power
AM6612NE
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30
22 @ VGS = 10V
30 @ VGS = 4.5V
SOIC-8
•
Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe SOIC-8 saves board space
Top View
S
1
8
S
2
7
• Fast switching speed
S
3
6
• High performance trench technology ESD Protected
G
4
5
2000V
ID (A) 9.4 7.
AM6612NE Datasheet
