AM6612NE Datasheet | Analog Power

Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) 22 @ VGS = 10V 30 @ VGS = 4.5V SOIC-8 - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe SOIC-8 saves board space Top View - Fast switching speed - High performance trench technology ESD Protected 2000V ID (A) 9.4 7.0 D N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA=25o C TA=70o C 30...