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AM6900NHE - Dual N-Channel MOSFET

Datasheet Summary

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Datasheet preview – AM6900NHE

Datasheet Details

Part number AM6900NHE
Manufacturer Analog Power
File Size 364.44 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AM6900NHE Datasheet
Additional preview pages of the AM6900NHE datasheet.

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Full PDF Text Transcription

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Analog Power AM6900NHE Dual N-Channel 12-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits VDS (V) 16 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 4.5V 13 @ VGS = 2.5V ID (A) 9.6 8.8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 16 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 9.6 7.8 40 2.2 Power Dissipation a TA=25°C TA=70°C PD 1.
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