AM7341P Datasheet | Analog Power

Analog Power P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, cellular and cordless telephones. - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe DFN3x3-8PP saves board space - Fast switching speed - High performance trench technology PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) -40 19 @ VGS = -10V 27 @ VGS = -4.5V DFN3x3-8PP Top View S1 S2 S3 G4 8 7 6 5 ID (A) -12 -10 D DG D DD P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA=25o C TA=70o C -40 ±20 -12 -10 IDM ±50 TA=25o C TA=70o C -2.1 3.5 2.0 TJ, Tstg -55 to 150 A A W o C THERMALRESISTANCERATINGS Parameter Maximum Junction-to-Ambienta t <=10 sec Steady State Symbol...