AM7496N Datasheet | Analog Power

Analog Power N-Channel 150-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, cellular and cordless telephones. - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe SOIC-8PP saves board space - Fast switching speed - High performance trench technology PRODUCT SUMMARY VDS (V) 150 r DS(on) m(Ω) 220 @ VGS = 10V 230 @ VGS = 5.5V SOIC-8PP Top View ID (A) 3.9 3.8 8D 7D 6D S 5 D N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Parame ter Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA=25o C TA=70o C 150 V TA=25o C TA=70o C 5.0 W TJ, Tstg -55 to 150 o C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction...