AM7930N Datasheet | Analog Power

Analog Power Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. - Low r DS(on) provides higher efficiency and extends battery life - Low thermal impedance copper leadframe SOIC-8PP saves board space - Fast switching speed - High performance trench technology PRODUCT SUMMARY VDS (V) r DS(on) m(Ω) SOIC-8PP Top View 8 @ VGS = 10V 12 @ VGS = 4.5V D1 ID (A) 37 30 D1 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 G1 G1 6 5 D2 D2 S1 N-Channel MOSFET S1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 o C UNLESS OTHERWISE NOTED) Paramete r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb TA=25o C TA=70o C 30 V 20 37 30 A ±50 Continuous Source Current (Diode Conduction)a 13 A Power Dissipationa TA=25o C TA=70o...