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Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Off-line Power Supplies • Electronic Ballasts • High Power LED Lighting
AM9N50P
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
500 750 @ VGS = 10V
ID (A) 9a
DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 500
Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TC=25°C
VGS ID IDM IS
±20 9 40 9
Power Dissipation
TC=25°C
PD
150
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RE
AM9N50P Datasheet
