Analog Power AM9N50P
N-Channel MOSFET
| Part No. | AM9N50P |
|---|---|
| Datasheet | AM9N50P Download |
| Manufacturer |  Analog Power |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● Fast switching speed Typical
APPLICATIONS
:● Off-line Power Supplies
● Electronic Ballasts
● High Power LED Lighting AM9N50P PRODUCT SUMMARY VDS (V) rDS(on) (mΩ) 500 750 @ VGS = 10V ID (A) 9a DRAIN connected to TAB
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C VGS ID IDM IS ±20 9 40 9 Power Dissipation TC=25°C PD 150 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.5 1 Units °C/W Notes a. Calculated continuous current based on maximum allowable junction temperature. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM9N50P_1A An...
