AMA423P - MOSFET

Analog Power

Key Features

Low rDS(on) trench technology.
Low thermal impedance.
2mm x 2mm footprint DFN package.
RDS rated at 1.8V Gate-drive Typical.

AMA423P mosfet by Analog Power - Datasheet Preview

Datasheet Details

Part number	AMA423P
Manufacturer	Analog Power
File Size	533.08 KB
Description	MOSFET
Datasheet	AMA423P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Analog Power AMA423P P-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • 2mm x 2mm footprint DFN package • RDS rated at 1.8V Gate-drive Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players PRODUCT SUMMARY rDS(on) (mΩ) 42 @ VGS = -4.5V 57 @ VGS = -2.5V 86 @ VGS = -1.8V VDS (V) -20 ID(A) -6.6 -5.7 -1 DFN2x2-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -20 VGS Gate-Source Voltage ±8 TA=25°C -6.6 ID Continuous Drain Current a TA=70°C -5.3 b IDM Pulsed Drain Current -20 a I 4 Continuous Source Current (Diode Conduction) S T =25°C 3 A PD Power Dissipation a TA=70°C 1.