Analog Power AMA423P
MOSFET
| Part No. | AMA423P |
|---|---|
| Datasheet | AMA423P Download |
| Manufacturer |  Analog Power |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
:● Low rDS(on) trench technology
● Low thermal impedance
● 2mm x 2mm footprint DFN package
● RDS rated at 1.8V Gate-drive Typical
APPLICATIONS
:● Battery Powered Instruments
● Portable Computing
● Mobile Phones
● GPS Units and Media Players PRODUCT SUMMARY rDS(on) (mΩ) 42 @ VGS = -4.5V 57 @ VGS = -2.5V 86 @ VGS = -1.8V VDS (V) -20 ID(A) -6.6 -5.7 -1 DFN2x2-8
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -20 VGS Gate-Source Voltage ±8 TA=25°C -6.6 ID Continuous Drain Current a TA=70°C -5.3 b IDM Pulsed Drain Current -20 a I 4 Continuous Source Current (Diode Conduction) S T =25°C 3 A PD Power Dissipation a TA=70°C 1.92 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 5 sec Steady State Symbol Maximum 40 RθJA 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction...
