AMA920N - Dual N-Channel MOSFET

Analog Power

Key Features

Low rDS(on) trench technology.
Low thermal impedance.
Fast switching speed Typical.

AMA920N dual n-channel mosfet by Analog Power - Datasheet Preview

Datasheet Details

Part number	AMA920N
Manufacturer	Analog Power
File Size	371.63 KB
Description	Dual N-Channel MOSFET
Datasheet	AMA920N Datasheet

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Full PDF Text Transcription (Reference)

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Analog Power AMA920N Dual N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 58 @ VGS = 4.5V 82 @ VGS = 2.5V ID(A) 4.6 3.9 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 4.6 3.6 ±10 2.8 Power Dissipation a TA=25°C TA=70°C PD 2.1 1.