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Analog Power
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN 3x3 saves board space Fast switching speed High performance trench technology
AMCC924NE
PRODUCT SUMMARY VDS (V) rDS (on) (OHM) 0.012 @ VGS = 4.5 V 20 0.014 @ VGS = 2.5V
DFN 3x3 Top View S1 G1 S2 G2 1 2 3 4 8 7 6 5 D D D D S1 N-Channel MOSFET G1 D
ID (A) 9.2 8.
AMCC924NE Datasheet
