APM4408 Datasheet | Anpec Electronics Coropration

Features - 20V/21A, RDS(ON) = 3.5mΩ(typ.) @ VGS = 10V RDS(ON) = 5mΩ(typ.) @ VGS = 4.5V RDS(ON) = 8mΩ(typ.) @ VGS = 2.5V Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D - High Density Cell Design .. - Reliable and Rugged - SO-8 Package - 8 Applications - Power Management in Notebook puter, Portable Equipment and Battery Powered Systems Ordering and Marking Information APM 4408 H a n d lin g C o d e Tem p. R ange P ackage C ode N-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel APM 4408 K : APM 4408 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID- IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25°C unless otherwise noted) Rating 20 ±16 21 60 A V Unit Maximum Drain Current - Continuous Maximum Drain Current - Pulsed - Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 1 .anpec..tw Absolute Maximum Ratings Cont. Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ TSTG .. (TA = 25°C unless otherwise noted) Rating 1.6 0.625 150 -55 to 150 80 W °C °C °C/W Unit Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to...