Datasheet Summary
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Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
- N-Channel 20V/8A , RDS(ON)=22mΩ(typ.) @ VGS=4.5V RDS(ON)=30mΩ(typ.) @ VGS=2.5V
Pin Description
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
- P-Channel -20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V RDS(ON)=105mΩ(typ.) @ VGS=-2.5V
SO-8
- -
- Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package
G1 G2 D1 D1 S2
Applications
S1 D2 D2
- Power Management in Notebook puter , Portable Equipment and Battery Powered Systems.
N-Channel MOSFET
P-Channel MOSFET
Ordering and Marking Information
Handling Code Temp. Range Package Code Package Code K : SO-8 Operation...
