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Features
• Provide Excellent RDS(ON) • Advanced Trench Technology • Low Gate Charge • Lead free product is acquired
Application
• Load Switch • PWM Application • Power management
ASDM30N40AE
30V N-Channel MOSFET
Product Summary
V DS R @ DS(on),Typ VGS=10 V ID
30
V
6.0 mΩ
40
A
PDFN3.3x3.3-8
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
VDSS VGSS
ID
IDM
EAS
PD RθJC TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current note1
TC = 25℃ TC = 100℃
Single Pulsed Avalanche Energy note2
Power Dissipation
TC = 25℃
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Max.
30 ±20 40 20 160 39 12 10.4 -55 to +150
Units
V V A A A mJ W ℃/W ℃
DEC 2021 Version1.0
1/7
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ASDM30N40AE Datasheet
