ASDM30N40AE Datasheet | Ascend

Features - Provide Excellent RDS(ON) - Advanced Trench Technology - Low Gate Charge - Lead free product is acquired Application - Load Switch - PWM Application - Power management 30V N-Channel MOSFET Product Summary V DS R @ DS(on),Typ VGS=10 V ID 6.0 mΩ PDFN3.3x3.3-8 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter VDSS VGSS PD RθJC TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy note2 Power Dissipation TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range Max. 30 ±20 40 20 160 39 12 10.4 -55 to +150 Units V V A A A m J W ℃/W ℃ DEC 2021 Version1.0 1/7 .ascendsemi....