ASDM30N40AE Description
0755-86970486 ASDM30N40AE 30V N-Channel MOSFET (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Pulse Width Limited by Maximum Junction Temperature 2. TJ=25℃, VGS=10V, RG=25Ω, L=0.5mH, IAS=12.6A.
ASDM30N40AE Key Features
- Provide Excellent RDS(ON)
- Advanced Trench Technology
- Low Gate Charge
- Lead free product is acquired
- Load Switch
- PWM Application
- Power management