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APS-1010-A - PIN Diode Switches

Download the APS-1010-A datasheet PDF. This datasheet also covers the APS-1001-A variant, as both devices belong to the same pin diode switches family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Br.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APS-1001-A-AtlanTecRF.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number APS-1010-A
Manufacturer AtlanTecRF
File Size 281.73 KB
Description PIN Diode Switches
Datasheet download datasheet APS-1010-A Datasheet

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Other Datasheets by AtlanTecRF

Part Number Description
APS-1010-R PIN Diode Switches
APS-1001-A PIN Diode Switches
APS-1001-R PIN Diode Switches
APS-1002-A PIN Diode Switches
APS-1002-R PIN Diode Switches

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor TO-92 Pin Configuration Bottom View E B C A E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage (I C=10mAdc, IB =0) Collector-Base Breakdown Voltage (I C=100uAdc, IE =0) Emitter-Base Breakdown Voltage (I E =100uAdc, IC=0) Collector Cutoff Current (V CB=50Vdc, IE =0) Emitter Cutoff Current (V EB =4.0Vdc, IC=0) DC Current Gain (I C=12.5mAdc, V CE=12.