Atmel AT28C010
1-Megabit (128K x 8) Paged Parallel Military EEPROM
FEATURES
● Fast Read Access Time - 120 ns● Automatic Page Write Operation – Internal Address and Data Latches for 128-Bytes – Internal Control Timer
● Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation
● Low Power Dissipation – 80 mA Active Current – 300µA CMOS Standby Current
● Hardware and Software Data Protection
● DATA Polling for End of Write Detection
● High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years
● Single 5V 10% Supply
● CMOS and TTL Compatible Inputs and Outputs
● JEDEC Approved Byte-Wide Pinout AT28C010 Mil 1-Megabit (128K x 8) Paged Parallel EEPROMs AT28C010 Military Pin Configuration Pin Name Function A0 - A16 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect CERDIP, FLATPACK Top View 44 LCC Top View NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6