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Features
• Single-voltage Operation • • •
– 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture – One 8K Word (16K Bytes) Boot Block with Programming Lockout – Two 4K Word (8K Bytes) Parameter Blocks – One 496K Word (992K Bytes) Main Memory Array Block Fast Sector Erase Time – 10 seconds Byte-by-byte or Word-by-word Programming – 10 µs Typical Hardware Data Protection Data Polling for End of Program Detection Low Power Dissipation – 50 mA Active Current – 100 µA CMOS Standby Current Typical 10,000 Write Cycles
• • • • • •
8-megabit (1M x 8/ 512K x 16) Flash Memory AT49F008A AT49F008AT AT49F8192A AT49F8192AT
Description
The AT49F008A(T) and AT49F8192A(T) are 5-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each