Datasheet Summary
Features
- Single-voltage Operation
- -
- - 5V Read
- 5V Programming Fast Read Access Time
- 70 ns Internal Erase/Program Control Sector Architecture
- One 8K Word (16K Bytes) Boot Block with Programming Lockout
- Two 4K Word (8K Bytes) Parameter Blocks
- One 496K Word (992K Bytes) Main Memory Array Block Fast Sector Erase Time
- 10 seconds Byte-by-byte or Word-by-word Programming
- 10 µs Typical Hardware Data Protection Data Polling for End of Program Detection Low Power Dissipation
- 50 mA Active Current
- 100 µA CMOS Standby Current Typical 10,000 Write Cycles
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- -
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8-megabit (1M x 8/ 512K x 16) Flash Memory AT49F008A AT49F008AT AT49F8192A AT49F8192AT
Description
The...