AS4DDR264M72PBG
AS4DDR264M72PBG is 64Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit manufactured by Austin Semiconductor.
i PEM 4.8 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR264M72PBG 64Mx72 DDR2 SDRAM i NTEGRATED Plastic Encapsulated Microcircuit
Features
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- DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp Package:
- 255 Plastic Ball Grid Array (PBGA), 25 x 32mm
- 1.27mm pitch Differential data strobe (DQS, DQS#) per byte Internal, pipelined, double data rate architecture 4n-bit prefetch architecture DLL for alignment of DQ and DQS transitions with clock signal Eightinternal banks for concurrent operation (Per DDR2 SDRAM Die) Programmable Burst lengths: 4 or 8 Auto Refresh and Self Refresh Modes (I/T Version) On Die Termination (ODT) Adjustable data
- output drive strength 1.8V ±0.1V power supply and I/O (VCC/VCCQ) Programmable CAS latency: 3, 4, 5, 6 or 7 Posted CAS additive latency: 0, 1, 2, 3, 4 or 5 Write latency = Read latency
- 1- t CK Organized as 64M x 72 w/ support for x80 Weight: AS4DDR264M72PBG ~ 3.5 grams typical
BENEFITS
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- - SPACE conscious PBGA defined for easy SMT manufacturability (50 mil ball pitch) Reduced part count 47% I/O reduction vs Individual CSP approach Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability applications Upgradable to 128M x 72 density in future
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- NOTE: Self Refresh Mode available on Industrial and Enhanced temp. only
.. FUNCTIONAL
2 Ax, BA0-1
BLOCK DIAGRAM
ODT VRef VCC VCCQ VSS VSSQ VCCL VSSDL CS0 CS1 CS2 CS3 CS4 UDMx, LDMx UDSQx,UDSQx LDSQx, LDSQx RASx,CASx,WEx CKx,CKx,CKEx A 2 2 2 3 3 A VCCL VSSDL 2 2 2 3 3 B VCCL VSSDL 2 2 2 3 3 C VCCL VSSDL 2 2 2 3 3 2 2 2 3 3 D VCCL VSSDL DQ64-79
DQ0-15 B
DQ16-31 C
DQ32-47 D
DQ48-63
AS4DDR264M72PBG Rev. 1.5 11/07
Austin Semiconductor,...
