Austin Semiconductor AS4DDR264M72PBG
64Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
FEATURES
DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp Package:● 255 Plastic Ball Grid Array (PBGA), 25 x 32mm
● 1.27mm pitch Differential data strobe (DQS, DQS#) per byte Internal, pipelined, double data rate architecture 4n-bit prefetch architecture DLL for alignment of DQ and DQS transitions with clock signal Eightinternal banks for concurrent operation (Per DDR2 SDRAM Die) Programmable Burst lengths: 4 or 8 Auto Refresh and Self Refresh Modes (I/T Version) On Die Termination (ODT) Adjustable data – output drive strength 1.8V ±0.1V power supply and I/O (VCC/VCCQ) Programmable CAS latency: 3, 4, 5, 6 or 7 Posted CAS additive latency: 0, 1, 2, 3, 4 or 5 Write latency = Read latency - 1* tCK Organized as 64M x 72 w/ support for x80 Weight: AS4DDR264M72PBG ~ 3.5 grams typical BENEFITS SPACE conscious PBGA defined for easy SMT manufacturability (50 mil ball pitch) Reduced part count 47% I/O reduction vs Individual CSP approach Reduc...