AS4SD8M16 Overview
Austin Semiconductor, Inc. 8 Meg x 16 SDRAM Synchronous DRAM Memory.
AS4SD8M16 Key Features
- Full Military temp (-55°C to 125°C) processing available
- Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks)
- Fully synchronous; all signals registered on positive
- Internal pipelined operation; column address can be
- Internal banks for hiding row access/precharge
- Programmable burst lengths: 1, 2, 4, 8 or full page
- Auto Precharge, includes CONCURRENT AUTO
- Self Refresh Mode (IT)
- 64ms, 4,096-cycle refresh (IT)
- <24ms 4,096 cycle recfresh (XT)
