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Austin Semiconductor, Inc.
SDRAM
AS4SD8M16
128 Mb: 8 Meg x 16 SDRAM
Synchronous DRAM Memory
FEATURES
• Full Military temp (-55°C to 125°C) processing available • Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive
edge of system clock • Internal pipelined operation; column address can be
changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO
PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT) • 64ms, 4,096-cycle refresh (IT) • <24ms 4,096 cycle recfresh (XT)
• WRITE Recovery (tWR = “2 CLK”) • LVTTL-compatible inputs and outputs • Single +3.3V ±0.
AS4SD8M16 Datasheet
