Micross AS4SD8M16
128 Mb: 8 Meg x 16 SDRAM
FEATURES
● Full Military temp (-55°C to 125°C) processing available● Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks)
● Fully synchronous; all signals registered on positive edge of system clock
● Internal pipelined operation; column address can be changed every clock cycle
● Internal banks for hiding row access/precharge
● Programmable burst lengths: 1, 2, 4, 8 or full page
● Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes
● Self Refresh Mode (IT & ET)
● 64ms, 4,096-cycle refresh (IT)
● 24ms 4,096 cycle recfresh (XT)
● WRITE Recovery (tWR = “2 CLK”)
● LVTTL-compatible inputs and outputs
● Single +3.3V ±0.3V power supply OPTIONS
● Plastic Package 54-pin TSOPII (400 mil) (Pb/Sn finish or RoHS available) MARKING DG No. 901
● Timing (Cycle Time) 7.5ns @ CL = 3 (PC133) or 10ns @ CL = 2 (PC100) -75
● Operating Temperature Range