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AS58C1001 Datasheet PDF

Austin Semiconductor AS58C1001

AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58C1001 is capable or in system electrical Byte and Page reprogrammability. The AS58C1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology.
Part No. AS58C1001
Datasheet AS58C1001 Download
Manufacturer
Austin Semiconductor
Description 128K x 8 EEPROM EEPROM Memory
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AS58C1001 datasheet page 1 preview

FEATURES

! ! High speed: 150, 200, and 250ns Data Retention: 10 Years ! Low power dissipation, active current (20mW/MHz (TYP)), standby current (100µW(MAX)) ! Single +5V (+10%) power supply ! Data Polling and Ready/Busy Signals ! Erase/Write Endurance (10,000 cycles in a page mode) ! Software Data protection Algorithm ! Data Protection Circuitry during power on/off ! Hardware Data Protection with RES pin ! Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size OPTIONS ! ! ! Timing 150ns access 200ns access 250ns access Packages Ceramic LCC Ceramic Flat Pack Radiation Shielded Ceramic FP* Ceramic SOJ Plastic SOP Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC) End Of Life 32-Pin LCC (ECA) A12 A15 A16 NC Vcc WE\ NC MARKINGS -15 -20 -25 4 3 2 1 32 31 30 ECA F SF DCJ DG No. 208 No. 306 No. 305 No. 508 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A14 A13 A8 A9 A11 OE\ A10 CE\ I/O 7 14 15 16 17 18 19 20 I/O 6 I/O 5 I/O 4 I/O 3 Vss I/O 2 I/O 1 XT IT *NOTE: Package lid is connected to ground (Vss).
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