AS58C1001 Datasheet | Austin Semiconductor

FEATURES ! ! High speed: 150, 200, and 250ns Data Retention: 10 Years ! Low power dissipation, active current (20m W/MHz (TYP)), standby current (100µW(MAX)) ! Single +5V (+10%) power supply ! Data Polling and Ready/Busy Signals ! Erase/Write Endurance (10,000 cycles in a page mode) ! Software Data protection Algorithm ! Data Protection Circuitry during power on/off ! Hardware Data Protection with RES pin ! Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size OPTIONS ! ! ! Timing 150ns access 200ns access 250ns access Packages Ceramic LCC Ceramic Flat Pack Radiation Shielded Ceramic FP- Ceramic SOJ Plastic SOP Operating Temperature Ranges -Military (-55o C to +125o C) -Industrial (-40o C to +85o C) End Of Life 32-Pin LCC (ECA) A12 A15 A16 NC Vcc WE NC MARKINGS -15 -20 -25 4 3 2 1 32 31 30 ECA F SF DCJ DG No. 208 No. 306 No. 305 No. 508 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A14 A13 A8 A9 A11 OE A10 CE I/O 7 14 15 16 17 18 19 20 I/O 6 I/O 5 I/O 4 I/O 3 Vss I/O 2 I/O 1 XT IT - NOTE: Package lid is connected to ground (Vss). GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58C1001 is capable or in system electrical Byte and Page reprogrammability. The AS58C1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology. This device has a 128-Byte Page Programming function to make its erase and write operations faster. The AS58C1001 features Data Polling and a Ready/Busy signal to indicate pletion of erase and programming operations. AS58C1001 Rev. 5.0 7/02 This EEPROM provides several levels of data protection. Hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal...