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AS58C1001 - 128K x 8 EEPROM

Key Features

  • z High speed: 150, 200, and 250ns z Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +5V (+10%) power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles in a page mode) z Software Data protection Algorithm z Data Protection Circuitry during power on/off z Hardware Data Protection with RES pin z Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size 32-Pin CFP (F & SF), 32.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EEPROM AS58C1001 128K x 8 EEPROM Radiation Tolerant PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS z SMD 5962-38267 z MIL-PRF-38535 FEATURES z High speed: 150, 200, and 250ns z Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +5V (+10%) power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles in a page mode) z Software Data protection Algorithm z Data Protection Circuitry during power on/off z Hardware Data Protection with RES pin z Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size 32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ) RDY/BUSY 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 I/O 0 13 I/O 1 14 I/O 2 15 Vss 16 32 Vcc 31 A15 30