AS58LC1001 Datasheet PDF | Austin Semiconductor

Austin Semiconductor AS58LC1001

AS58LC1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58LC1001 is capable or in system electrical Byte and Page reprogrammability. The AS58LC1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology.

Part No.	AS58LC1001
Datasheet	AS58LC1001 Download
Manufacturer	Austin Semiconductor
Description	128K x 8 EEPROM Radiation Tolerant
Buy	Stock & Price

FEATURES

High speed: 250ns and 300ns Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.3V power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles in a page mode) z Software Data protection Algorithm z Data Protection Circuitry during power on/off z Hardware Data Protection with RES pin z Automatic Programming: Automatic Page Write: 15ms (MAX) 128 Byte page size z z

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. This device has a 128-Byte Page Programming function to make its erase and write operations faster. The AS58LC1001 features Data Polling and a Ready/Busy signal to indicate completion of erase and programming operations. This EEPROM provides several levels of data protection. Hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit during power on and off. Software data protection is implemented using JEDEC Optional Standard algorithm.

AS58LC1001 Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
AS58LC1001	Micross