AS58LC1001 Datasheet | Austin Semiconductor

EEPROM Austin Semiconductor, Inc. 128K x 8 EEPROM Radiation Tolerant AVAILABLE AS MILITARY SPECIFICATIONS z z PIN ASSIGNMENT (Top View) 32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ), 32-Pin SOP (DG) RDY/BUSY A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 RES WE A13 A8 A9 A11 OE A10 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 Austin Semiconductor Space Level Austin Semiconductor Class ‘B’ Features High speed: 250ns and 300ns Data Retention: 10 Years z Low power dissipation, active current (20m W/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.3V power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles in a page mode) z Software Data protection Algorithm z Data Protection Circuitry during power on/off z Hardware Data Protection with RES pin z Automatic Programming: Automatic Page Write: 15ms (MAX) 128 Byte page size z z GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS58LC1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58LC1001 is capable or in system electrical Byte and Page reprogrammability. The AS58LC1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology. This device has a 128-Byte Page Programming function to make its erase and write operations faster. The AS58LC1001 Features Data Polling and a Ready/Busy signal to indicate pletion of erase and programming operations. This EEPROM provides several levels of data protection. Hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit during power on and off. Software data protection is implemented using JEDEC Optional Standard algorithm. The AS58LC1001 is designed for...