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AS58LC1001 - 128K x 8 EEPROM Radiation Tolerant

General Description

The Austin Semiconductor, Inc.

AS58LC1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits.

The AS58LC1001 is capable or in system electrical Byte and Page reprogrammability.

Key Features

  • High speed: 250ns and 300ns Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.3V power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles in a page mode) z Software Data protection Algorithm z Data Protection Circuitry during power on/off z Hardware Data Protection with RES pin z Automatic Programming: Automatic Page Write: 15ms (MAX) 128 Byte page size z z.

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Datasheet Details

Part number AS58LC1001
Manufacturer Austin Semiconductor
File Size 318.92 KB
Description 128K x 8 EEPROM Radiation Tolerant
Datasheet download datasheet AS58LC1001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EEPROM Austin Semiconductor, Inc. 128K x 8 EEPROM Radiation Tolerant AVAILABLE AS MILITARY SPECIFICATIONS z z AS58LC1001 PIN ASSIGNMENT (Top View) 32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ), 32-Pin SOP (DG) RDY/BUSY A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 RES WE A13 A8 A9 A11 OE A10 CE I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 Austin Semiconductor Space Level Austin Semiconductor Class ‘B’ FEATURES High speed: 250ns and 300ns Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.