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AS58LC1001 - 128K x 8 EEPROM

Key Features

  • z High speed: 250ns and 300ns z Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.3V power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles in a page mode) z Software Data protection Algorithm z Data Protection Circuitry during power on/off z Hardware Data Protection with RES pin z Automatic Programming: Automatic Page Write: 15ms (MAX) 128 Byte page size.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EEPROM AS58LC1001 128K x 8 EEPROM Radiation Tolerant PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS z MIL-PRF-38535 FEATURES z High speed: 250ns and 300ns z Data Retention: 10 Years z Low power dissipation, active current (20mW/MHz (TYP)), standby current (100μW(MAX)) z Single +3.3V +.3V power supply z Data Polling and Ready/Busy Signals z Erase/Write Endurance (10,000 cycles in a page mode) z Software Data protection Algorithm z Data Protection Circuitry during power on/off z Hardware Data Protection with RES pin z Automatic Programming: Automatic Page Write: 15ms (MAX) 128 Byte page size OPTIONS MARKINGS z Timing 250ns access -25 300ns access -30 z Packages Ceramic Flat Pack F No. 306 Radiation Shielded Ceramic FP* SF No. 305 Ceramic SOJ DCJ No.