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1N5712 Datasheet Schottky Barrier Diodes

Manufacturer: Avago Technologies (now Broadcom)

Overview: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage.

Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

The 5082-2835 is a passivated Schottky diode in a low cost glass package.

Key Features

  • Low Turn-On Voltage As Low as 0.34 V at 1 mA.
  • Pico Second Switching Speed.
  • High Breakdown Voltage Up to 70 V.
  • Matched Characteristics Available Outline 15 0.41 (.016).
  • 0.36 (.014) Maximum Ratings Junction Operating and Storage Temperature Range   1N5711, 1N5712, 5082-2800/10/11 -65°C to +200°C   5082-2835 -60°C to +150°C DC Power Dissipation   (Measured in an infinite heat sink at TCASE = 25°C)   Derate linearly to zero at maximum rated temp.   1N5711,.

Similar Datasheet

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M-Pulse Microwave Logo 1N5712 General Purpose Schottky Diodes M-Pulse Microwave
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Agilent Logo 1N5712 Schottky Barrier Diodes Agilent

More Datasheets from Avago Technologies (now Broadcom)

Part Number Description
1N5711 Schottky Barrier Diodes
1N5719 PIN Diodes
1N5767 PIN Diodes

1N5712 Distributor