Avago Technologies 1N5712
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break down voltage. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage.| Part No. | 1N5712 |
|---|---|
| Datasheet | 1N5712 Download |
| Manufacturer |  Avago Technologies |
| Description | Schottky Barrier Diodes |
| Buy | Stock & Price |
APPLICATIONS
Data SheetDESCRIPTION
/APPLICATIONS
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace.FEATURES
● Low Turn-On Voltage As Low as 0.34 V at 1 mA● Pico Second Switching Speed
● High Breakdown Voltage Up to 70 V
● Matched Characteristics Available Outline 15 0.41 (.016) 0.36 (.014)
MAXIMUM RATINGS
Junction Operating and Storage Temperature Range 1N5711, 1N5712, 5082-2800/10/11...... -65°C to +200°C 5082-2835...................................................... -60°C to +150°C DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temp.
