1N5712
1N5712 is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = Max. Power Dissipation (PT) at TA = 25° C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
16.0 V
20.0 V empty
0.035 A empty
A empty
0.25 W
500.0 °C/W
150.0 °C
NO. TYPE empty empty CASE empty empty
1N5712 SCHOTTKY empty empty DO-35 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VBR
IR = 10.0 µA
(1) 20.0
- V
2. IR
VR = 16.0 V
- 150.0 nA
3. VF
IF = 1.0 mA
(1)
- 0.41 V
4....
