AT-64023 Datasheet PDF - Avago Up to 4 GHz Linear Power Silicon Bipolar Transistor Specs

AT-64023 - Up to 4 GHz Linear Power Silicon Bipolar Transistor

Datasheet Summary

Description

The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics.

This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies.

Features

High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz.
High Gain at 1 dB Compression: 12.5 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz.
35% Total Efficiency.
Emitter Ballast Resistors.
Hermetic, Metal/Beryllia Str.

Datasheet Details

Part number	AT-64023
Manufacturer	Avago
File Size	71.95 KB
Description	Up to 4 GHz Linear Power Silicon Bipolar Transistor
Datasheet	AT-64023 Datasheet
Additional preview pages of the AT-64023 datasheet.

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Full PDF Text Transcription

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AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor Data Sheet Description The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 230 mil BeO Package Features • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.

Published: Jul 17, 2018 |