AT-64023
AT-64023 is Up to 4 GHz Linear Power Silicon Bipolar Transistor manufactured by Avago Technologies.
Description
The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic Be O flange package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers.
230 mil Be O Package
Features
- High Output Power: 27.5 d Bm Typical P1 d B at 2.0 GHz 26.5 d Bm Typical P1 d B at 4.0 GHz
- High Gain at 1 d B pression: 12.5 d B Typical G1 d B at 2.0 GHz 9.5 d B Typical G1 d B at 4.0 GHz
- 35% Total Efficiency
- Emitter Ballast Resistors
- Hermetic, Metal/Beryllia...
