HMMC-5040 - 20 - 40 GHz Amplifier

Avago Technologies (now Broadcom)

General Description

The HMMC-5040 is a high-gain broadband MMIC amplifier designed for both military applica-tions and commercial communication systems.

This four stage amplifier has input and output matching circuitry for use in 50 ohm environments.

Key Features

Large bandwidth: 20.
44 GHz typical 21.
40 GHz specified.
High gain: 22 dB typical.
Saturated output power:.

📥 Download Datasheet

HMMC-5040 20 - 40 ghz amplifier by Avago Technologies (now Broadcom) - Datasheet Preview

Datasheet Details

Part number	HMMC-5040
Manufacturer	Avago Technologies (now Broadcom)
File Size	114.25 KB
Description	20 - 40 GHz Amplifier
Datasheet	HMMC-5040 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HMMC-5021	2-26.5 GHz GaAs MMIC Traveling Wave Amplifier	Agilent
HMMC-5021	2-26.5 GHz GaAs MMIC Traveling Wave Amplifier	HP
HMMC-5021	GaAs MMIC Traveling Wave Amplifier	Keysight
HMMC-5022	2-26.5 GHz GaAs MMIC Traveling Wave Amplifier	Agilent
HMMC-5022	2-26.5 GHz GaAs MMIC Traveling Wave Amplifier	HP

Other Datasheets by Avago Technologies (now Broadcom)

Part Number	Description
HMMC-5021	GaAs MMIC Traveling Wave Amplifiers
HMMC-5025	2 - 50 GHz Distributed Amplifier
HMMC-5026	GaAs MMIC Traveling Wave Amplifiers
HMMC-5038	38GHz LNA
HMMC-2027	DC-26.5 GHz SPDT GaAs MMIC Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HMMC-5040 20 – 40 GHz Amplifier Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1720 x 760 µm (67.7 x 29.9 mils) ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 80 x 80 µm (3.1 x 3.1 mils) Description The HMMC-5040 is a high-gain broadband MMIC amplifier designed for both military applica-tions and commercial communication systems. This four stage amplifier has input and output matching circuitry for use in 50 ohm environments. It is fabricated using a PHEMT integrated circuit structure that provides exceptional broadband performance. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs.