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B1D08065E Datasheet

Manufacturer: BASiC Semiconductor
B1D08065E datasheet preview

Datasheet Details

Part number B1D08065E
Datasheet B1D08065E-BASiCSemiconductor.pdf
File Size 284.14 KB
Manufacturer BASiC Semiconductor
Description SiC Schottky Diode
B1D08065E page 2 B1D08065E page 3

B1D08065E Overview

Product Summary VRRM 650V IF (TC=155°C) QC 8A 24.

B1D08065E Key Features

  • Extremely low reverse current
  • No reverse recovery current
  • Temperature independent switching
  • Positive temperature coefficient on V F
  • Excellent surge current capability
  • Low capacitive charge
  • Essentially no switching losses
  • System efficiency improvement over Si diodes
  • Increased power density
  • Enabling higher switching frequency

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