Part B1D08065E
Description SiC Schottky Diode
Category Diode
Manufacturer BASiC Semiconductor
Size 284.14 KB
BASiC Semiconductor

B1D08065E Overview

Key Features

  • Extremely low reverse current
  • No reverse recovery current
  • Temperature independent switching
  • Positive temperature coefficient on V F
  • Excellent surge current capability
  • Low capacitive charge Benefits
  • Essentially no switching losses
  • System efficiency improvement over Si diodes
  • Increased power density
  • Enabling higher switching frequency