B1D08065E - SiC Schottky Diode

Datasheet Summary

Description

of Changes Release of the datasheet.

Characteristics updated.

Features

Extremely low reverse current.
No reverse recovery current.
Temperature independent switching.
Positive temperature coefficient on V F.
Excellent surge current capability.
Low capacitive charge Benefits.
Essentially no switching losses.
System efficiency improvement over Si diodes.
Increased power density.
Enabling higher switching frequency.
Reduction of heat sink requirements.
System cost savings due to smaller magnetics.

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B1D08065E SiC Schottky Diode by BASiC Semiconductor - Datasheet Preview — Datasheet preview – B1D08065E

Datasheet Details

Part number	B1D08065E
Manufacturer	BASiC Semiconductor
File Size	284.14 KB
Description	SiC Schottky Diode
Datasheet	B1D08065E Datasheet
Additional preview pages of the B1D08065E datasheet.

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Full PDF Text Transcription

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Product Summary VRRM 650V IF (TC=155°C) QC 8A 24 nC Features  Extremely low reverse current  No reverse recovery current  Temperature independent switching  Positive temperature coefficient on V F  Excellent surge current capability  Low capacitive charge Benefits  Essentially no switching losses  System efficiency improvement over Si diodes  Increased power density  Enabling higher switching frequency  Reduction of heat sink requirements  System cost savings due to smaller magnetics  Reduced EMI Applications  Switch mode power supplies (SMPS)  Uninterruptible power supplies  Motor drivers  Power factor correction Package Pin Definitions  Pin1,3 and backside - Cathode  Pin2 - Anode Package Parameters Part Number B1D08065E Marking B1D08065E B1D08065E SiC

Published: Nov 3, 2024 |