Low Dropout Voltage: 1.1V at 600mA Output Current Output Noise from 10Hz to 10KHz: 0.003% of VOUT PSRR at IOUT=300mA and f=120Hz: 75dB Output Voltage Accuracy: ± 1% On-chip Thermal Shutdown Maximum Quiescent Current: IQMAX=5mA ESD (Human Body Model): 3.5KV Operation Junction Temperature: -40 to 125oC
Datasheets by Manufacturer
AP2317GN — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2317GN-HF-3 — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2317GN-HF — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2310AGN-HF — Advanced Power Electronics Corp — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2311GK-HF — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2311GN-HF — Advanced Power Electronics Corp — P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2314GN-HF — Advanced Power Electronics Corp — N-channel Enhancement mode Power MOSFET
AP2316GN-HF-3 — Advanced Power Electronics Corp — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2311A — Diodes Incorporated — 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH
