BL3N100E Overview
Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 1000 V ID 2.5 A RD S(O N ) .T yp 6.2.
BL3N100E Key Features
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- Protected
- RoHS product