BL3N90E - Power MOSFET

Datasheet Summary

Description

avalanche energy.

Features

Fast Switching.
Low Crss.
100% avalanche tested.
Improved dv/dt capability.
Zener - Protected.
RoHS product.

BELLING

📥 Download Datasheet

Datasheet Details

Part number	BL3N90E
Manufacturer	BELLING
File Size	965.64 KB
Description	Power MOSFET
Datasheet	BL3N90E Datasheet
Additional preview pages of the BL3N90E datasheet.

📁 Similar Datasheet

BL3N60 - N-Channel Power Mosfet (GME)
BL3N65 - N-Channel Power Mosfet (GME)
BL3N80 - N-Channel Power Mosfet (GME)
BL3102 - COMS Clock Generator/Driver (SHANGHAI BELLING)
BL3201B - PLED (Bolymin)
BL3207 - 1024 segment low voltage and low noise BBD (SHANGHAI BELLING)
BL3207A - 1024-stage low voltage operation and low noise BBD variable delay line (SHANGHAI BELLING)
BL3207B - 1024-stage low voltage operation and low noise BBD variable delay line (SHANGHAI BELLING)
BL3208 - 2048 segment low voltage and low noise BBD (SHANGHAI BELLING)
BL3208A - 2048-stage low voltage operation and low noise BBD variable delay line in audiofrequency range (SHANGHAI BELLING)

Other Datasheets by BELLING

BL3N100E - Power MOSFET
BL3085A - RS-485 Transceivers
BL3085B - RS-485 Transceivers
BL3085E - High-speed transceiver
BL3090 - RS-485/RS-422 Transceivers
BL317 - HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR
BL317B - HIGH CURRENT ADJUSTABLE VOLTAGE REGULATOR
BL317L - 3-TERMINAL ADJUSTABLE OUTPUT POSITIVE VOLTAGE REGULATOR

Full PDF Text Transcription

Click to expand full text

BL3N90E Power MOSFET 1．Description Step-Down Converter BL3N90E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 900 V ID 3 A RDS(ON).Typ 4.

Published: Nov 15, 2024 |