BL4N90 Description
BL4N90, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 900 V ID 4 A RDS(ON).Typ 2.6.
BL4N90 Key Features
- Fast Switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product