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BL4N90
Power MOSFET
1.Description
BL4N90, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
VDS@Tj.max
900
V
ID
4
A
RDS(ON).Typ
2.