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BLM2010E Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: BELLING

Overview: ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number BLM2010E
Manufacturer BELLING
File Size 301.62 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet BLM2010E-BELLING.pdf

General Description

The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

Key Features

  • VDS = 20V,ID =7A Typ. RDS(ON)= 16mΩ @ VGS=4.5V Typ. RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram Marking and pin Assignment.

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BLM2010E Distributor