BLM2010E - N-Channel Enhancement Mode Power MOSFET

Product Overview

BELLING

Part number	BLM2010E
Manufacturer	BELLING
File Size	301.62 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLM2010E Datasheet
Additional preview pages of the BLM2010E datasheet.

The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =7A Typ. RDS(ON)= 16mΩ @ VGS=4.5V Typ. RDS(ON)= 20mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment.

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Published: Feb 25, 2016 |