BLM22N10 Overview
The BLM22N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Pulse width limited by maximum junction temperature.
BLM22N10 datasheet by BELLING.
| Part number | BLM22N10 |
|---|---|
| Datasheet | BLM22N10-BELLING.pdf |
| File Size | 847.39 KB |
| Manufacturer | BELLING |
| Description | 100V N-Channel Power MOSFET |
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The BLM22N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Pulse width limited by maximum junction temperature.
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