Datasheet Details
| Part number | BLM22N10 |
|---|---|
| Manufacturer | BELLING |
| File Size | 847.39 KB |
| Description | 100V N-Channel Power MOSFET |
| Datasheet | BLM22N10-BELLING.pdf |
|
|
Overview: Green Product BLM22N10 100V N-Channel Power MOSFET.
| Part number | BLM22N10 |
|---|---|
| Manufacturer | BELLING |
| File Size | 847.39 KB |
| Description | 100V N-Channel Power MOSFET |
| Datasheet | BLM22N10-BELLING.pdf |
|
|
|
The BLM22N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge.
It can be used in a wide variety of applications.
Application ●Power switching application ●Hard switched and High frequency circuits ●Uninterruptible power supply KEY CHARACTERISTICS ● VDS = 100V,ID = 50A RDS(ON) < 22mΩ @ VGS=10V ● Special process technology for high ESD capability ● High density cell design for lower Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation 100% UIS TESTED！ 100% DVDS TESTED！ TO-220 Top View TO-252-2L Top View Schematic diagram Package Marking And Ordering Information Device Marking M22N10 M22N10 Ordering Codes BLM22N10-P BLM22N10-D Package TO-220 TO-252-2L Product Code BLM22N10 BLM22N10 Packing Tube Tape Reel Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single pulse avalanche energy(Note 2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID（TO-220） ID（TO-252） IDM PD（TO-220） PD（TO-252） EAS TJ,TSTG Limit 100 ±20 50 40 200 125 83 180 -55 To 175 Unit V V A A A W W mJ ℃ Page1 www.belling.com.cn V 1.1 Thermal Characteristic（TO-220） Thermal Resistance,Junction-to-Case RθJC Thermal Characteristic （TO-252） Thermal Resistance,Junction-to-Case RθJC Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance(Note 3) Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay
| Part Number | Description |
|---|---|
| BLM2004NE | N-Channel Enhancement Mode Power MOSFET |
| BLM2006NE | N-Channel Enhancement Mode Power MOSFET |
| BLM2008E | N-Channel Enhancement Mode Power MOSFET |
| BLM2010E | N-Channel Enhancement Mode Power MOSFET |
| BLM2301 | P-Channel Enhancement Mode Power MOSFET |
| BLM2302 | N-Channel Enhancement Mode Power MOSFET |
| BLM2304 | N-Channel Enhancement Mode Power MOSFET |
| BLM2305 | P-Channel Enhancement Mode Power MOSFET |
| BLM2312 | N-Channel Enhancement Mode Power MOSFET |
| BLM04N06 | 60V N-Channel Power MOSFET |