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BLM4953A - P-Channel Enhancement Mode Power MOSFET

General Description

The BLM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Marking and pin Assignment.

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Datasheet Details

Part number BLM4953A
Manufacturer BELLING
File Size 260.98 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet BLM4953A Datasheet

Full PDF Text Transcription (Reference)

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Pb Free Product BLM4953A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM4953A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.