BLP021N10 Overview
Step-Down Converter BLP021N10, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V ID 292 A RDS(on).typ 1.6.
BLP021N10 Key Features
- Fast Switching
- Low On-Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- High avalanche ruggedness
- RoHS product