BLP021N10 - MOSFET

BELLING

General Description

avalanche energy.

and high current switching applications.

Key Features

Fast Switching.
Low On-Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

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BLP021N10 mosfet by BELLING - Datasheet Preview

Datasheet Details

Part number	BLP021N10
Manufacturer	BELLING
File Size	0.97 MB
Description	MOSFET
Datasheet	BLP021N10 Datasheet

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Full PDF Text Transcription (Reference)

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BLP021N10 MOSFET 1．Description Step-Down Converter BLP021N10, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V ID 292 A RDS(on).typ 1.6 mΩ FEATURES  Fast Switching  Low On-Resistance  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness  RoHS product APPLICATIONS  BMS  High current switching applications TOLL8 ORDERING INFORMATION Ordering Codes Package BLP021N10-T TOLL8 Product Code P021N10 Packing Reel BLP021N10-T (2) Package type (1) Chip name (1) BLP021N10：2.