BLP038N10GL Overview
, BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 100 V ID 120 A RDS(on)@10V.typ 3.3 mΩ RDS(on)@4.5V.typ 4.5.
BLP038N10GL Key Features
- Fast Switching
- Low On-Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- High avalanche ruggedness
- RoHS product