BLP03N10 Datasheet | BELLING

MOSFET Step-Down Converter 1．Description , BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS RDS(on).typ 2.7 mΩ Features - Fast Switching - Low On-Resistance - Low Gate Charge - Low Reverse transfer capacitances - High avalanche ruggedness - Ro HS product APPLICATIONS - BMS - High current switching applications TO-247 ORDERING INFORMATION Ordering Codes Package BLP03N10-F TO-247 Product Code P03N10 Packing Tube BLP03N10-F (2) Package type (1) Chip name (1) BLP03N10：3mΩ/100V...