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BLP04N11 - MOSFET

General Description

technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • Fast Switching.
  • Low On-Resistance.
  • Low Gate Charge.
  • Low Reverse transfer capacitances.
  • High avalanche ruggedness.
  • RoHS product.

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Datasheet Details

Part number BLP04N11
Manufacturer BELLING
File Size 954.23 KB
Description MOSFET
Datasheet download datasheet BLP04N11 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLP04N11 MOSFET 1.Description BLP04N11, the N-channel EnhSatnecepd-DPoowwenr Converter MOSFETs, is obtained by advanced double trench Ⅱ , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 110 V ID 120 A RDS(on).typ 3.