BLP04N11 - MOSFET

Datasheet Summary

Description

technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low On-Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
High avalanche ruggedness.
RoHS product.

BELLING

📥 Download Datasheet

Datasheet Details

Part number	BLP04N11
Manufacturer	BELLING
File Size	954.23 KB
Description	MOSFET
Datasheet	BLP04N11 Datasheet
Additional preview pages of the BLP04N11 datasheet.

📁 Similar Datasheet

BLP0427M9S20 - Power LDMOS transistor (Ampleon)
BLP0427M9S20G - Power LDMOS transistor (Ampleon)
BLP0240 - Si PIN junction photodiode (SHANGHAI BELLING)
BLP05H6110XR - Power LDMOS transistor (Ampleon)
BLP05H6110XRG - Power LDMOS transistor (Ampleon)
BLP05H6150XR - Power LDMOS transistor (Ampleon)
BLP05H6150XRG - Power LDMOS transistor (Ampleon)
BLP05H6200XR - Power LDMOS transistor (Ampleon)
BLP05H6250XR - Power LDMOS transistor (Ampleon)
BLP05H6250XRG - Power LDMOS transistor (Ampleon)

Other Datasheets by BELLING

BLP042N10G - MOSFET
BLP021N10 - MOSFET
BLP023N10 - MOSFET
BLP02N08 - MOSFET
BLP038N10GL - MOSFET
BLP038N15 - MOSFET
BLP03N10 - MOSFET
BLP05N08G - N-channel Enhanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

BLP04N11 MOSFET 1．Description BLP04N11, the N-channel EnhSatnecepd-DPoowwenr Converter MOSFETs, is obtained by advanced double trench Ⅱ , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit VDSS 110 V ID 120 A RDS(on).typ 3.

Published: Nov 15, 2024 |